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authorJakub Kicinski <[email protected]>2022-06-16 20:29:07 -0700
committerJakub Kicinski <[email protected]>2022-06-16 20:29:08 -0700
commit6c0d09d9374c025f503d33bcef5f656e3f1dd349 (patch)
treea3191c55afbe8ec7ad8714ce8179dd44992c762e /tools/perf/scripts/python/mem-phys-addr.py
parent9cbc9911260f24cd3ce2bfb3bcdf4792366a5745 (diff)
parent5c2d0a6a0701ba86a4bb0bf1876266c751e328bd (diff)
Merge branch 'dt-bindings-dp83867-add-binding-for-io_impedance_ctrl-nvmem-cell'
Rasmus Villemoes says: ==================== dt-bindings: dp83867: add binding for io_impedance_ctrl nvmem cell We have a board where measurements indicate that the current three options - leaving IO_IMPEDANCE_CTRL at the reset value (which is factory calibrated to a value corresponding to approximately 50 ohms) or using one of the two boolean properties to set it to the min/max value - are too coarse. This series adds a device tree binding for an nvmem cell which can be populated during production with a suitable value calibrated for each board, and corresponding support in the driver. The second patch adds a trivial phy wrapper for dev_err_probe(), used in the third. ==================== Link: https://lore.kernel.org/r/[email protected] Signed-off-by: Jakub Kicinski <[email protected]>
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