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authorRasmus Villemoes <[email protected]>2022-06-14 10:46:10 +0200
committerJakub Kicinski <[email protected]>2022-06-16 20:28:53 -0700
commitab1e9de84aff0ca897dee5e4d6692ff46788697b (patch)
treecdeb229faef06c4506d0dfdabccce059ae9111b7 /tools/perf/scripts/python/mem-phys-addr.py
parent9cbc9911260f24cd3ce2bfb3bcdf4792366a5745 (diff)
dt-bindings: dp83867: add binding for io_impedance_ctrl nvmem cell
We have a board where measurements indicate that the current three options - leaving IO_IMPEDANCE_CTRL at the reset value (which is factory calibrated to a value corresponding to approximately 50 ohms) or using one of the two boolean properties to set it to the min/max value - are too coarse. There is no fixed mapping from register values to values in the range 35-70 ohms; it varies from chip to chip, and even that target range is approximate. So add a DT binding for an nvmem cell which can be populated during production with a value suitable for each specific board. Reviewed-by: Rob Herring <[email protected]> Reviewed-by: Andrew Lunn <[email protected]> Signed-off-by: Rasmus Villemoes <[email protected]> Signed-off-by: Jakub Kicinski <[email protected]>
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