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| author | Rasmus Villemoes <[email protected]> | 2022-06-14 10:46:10 +0200 |
|---|---|---|
| committer | Jakub Kicinski <[email protected]> | 2022-06-16 20:28:53 -0700 |
| commit | ab1e9de84aff0ca897dee5e4d6692ff46788697b (patch) | |
| tree | cdeb229faef06c4506d0dfdabccce059ae9111b7 /tools/perf/scripts/python/mem-phys-addr.py | |
| parent | 9cbc9911260f24cd3ce2bfb3bcdf4792366a5745 (diff) | |
dt-bindings: dp83867: add binding for io_impedance_ctrl nvmem cell
We have a board where measurements indicate that the current three
options - leaving IO_IMPEDANCE_CTRL at the reset value (which is
factory calibrated to a value corresponding to approximately 50 ohms)
or using one of the two boolean properties to set it to the min/max
value - are too coarse.
There is no fixed mapping from register values to values in the range
35-70 ohms; it varies from chip to chip, and even that target range is
approximate. So add a DT binding for an nvmem cell which can be
populated during production with a value suitable for each specific
board.
Reviewed-by: Rob Herring <[email protected]>
Reviewed-by: Andrew Lunn <[email protected]>
Signed-off-by: Rasmus Villemoes <[email protected]>
Signed-off-by: Jakub Kicinski <[email protected]>
Diffstat (limited to 'tools/perf/scripts/python/mem-phys-addr.py')
0 files changed, 0 insertions, 0 deletions